Fabrication of Thick Silicon Nitride by Reaction Bonding and Post-Sintering
نویسندگان
چکیده
منابع مشابه
Spontaneous direct bonding of thick silicon nitride
Wafers with 1 μm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical–mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si–Si hydrophilic bonding. A mechanis...
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Thick silicon nitride blocks embedded in silicon wafers were recently proposed as a substrate for RF devices. In this paper we show that deep trenches filled with silicon nitride—having thin slices of monocrystalline silicon in between—already result in a significantly improved RF behavior. Measurement results are presented on RF coplanar waveguides using solid silicon nitride blocks and silico...
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متن کاملFabrication of thick silicon nitride blocks for integration of RF devices
Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high s...
متن کاملFabrication of thick silicon nitride blocks for integration of RF devices - Electronics Letters
Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high s...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 2007
ISSN: 0914-5400,1882-1022
DOI: 10.2109/jcersj.115.285